Ocaya–Yakuphano?lu method for series resistance extraction and compensation of Schottky diode I–V characteristics

We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of metal-semiconductor diode. show that reduced equation arises from unique but hitherto unreported symmetry in Schottky when it is written as an ordinary differential equation. In spite intense mathematical justification, we how this new directly applicable empirical data set through simple algorithm. test on Al/p-Si/Bi$_2$Se$_3$/Al diode compare with Cheung-Cheung same data. The resistance was found change exponentially applied bias rate constant depends incident illumination. decreased independent trends results agree strongly literature may yield more accurate parameters compared other electrical methods.